High-Quality Single Crystalline Ge(111)Growth on Si(111)Substrates by Solid Phase Epitaxy

作     者：SUN Bing CHANG Hu-Dong LU Li LIU Hong-Gang WU De-Xin 孙兵;常虎东;卢力;刘洪刚;吴德馨

作者机构：Microwave Device and IC DepartmentInstitute of MicroelectronicsChinese Academy of SciencesBeijing 100029 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2012年第29卷第3期

页      面：154-156页

核心收录：

学科分类：08[工学] 080502[工学-材料学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：Supported by the National Basic Research Program of China under Grant Nos 2011CB309605 and 2010CB327501 the National Science&Technology Major Project of China under Grant No 2011ZX02708-003 

主　　题：crystalline Solid roughness 

摘      要：Heterogeneous integration of crystalline Ge layers on cleaned and H-terminated Si(111)substrates are demonstrated by employing a combination of e-beam evaporation and solid phase epitaxy ***-quality single crystalline Ge(111)layers on Si(111)substrates with a smooth Ge surface and an abrupt interface between Ge and Si are *** XRD rocking curve scan of the Ge(111)diffraction peak shovs a FWHM of only 260 arcsec for a 50-nm-thick Ge layer annealed at 600℃with a ramp-up rate of 20℃/s and a holding time of 1 *** AFM images exhibit that the rms surface roughness of all the crystalline Ge layers are less than 2.1 nm.