Growth and Properties of Blue and Amber Complex Light Emitting InGaN/GaN Multi-Quantum Wells

作     者：XIE Zi-Li ZHANG Rong LIU Bin XIU Xiang-Qian SU Hui LI Yi HUA Xue-Mei ZHAO Hong CHEN Peng HAN Ping SHI Yi ZHENG You-Dou 谢自力;张荣;刘斌;修向前;苏辉;李毅;华雪梅;赵红;陈鹏;韩平;施毅;郑有炓

作者机构：Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materialsand National Laboratory of Solid State MicrostructuresSchool of Electronics Science and EngineeringNanjing UniversityNanjing 210093 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2011年第28卷第8期

页      面：247-249页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：by the National Basic Research Program of China under Grant No 2011CB301900 the National High-Technology Research and Development Program of China under Grant No 2009AA03A198 the National Natural Science Foundation of China under Grant Nos 60721063,60676057,60731160628,60820106003,60990311 and 60906025 the Natural Science Foundation of Jiangsu Province(BK2008019,BK2009255) the Research Funds from NJU-Yangzhou Institute of Opto-electronics 

主　　题：InGaN/GaN sapphire quantum 

摘      要：Blue-red complex light emitting InGaN/GaN multi-quantum well(MQW)structures are fabricated by metal organic chemical vapor deposition(MOCVD).The structures are grown on a 2-inch diameter(0001)oriented(c−face)sapphire substrate,which consists of an approximately 2-µm−thick GaN template and a five-period layer consisting of a 4.9-nm-thick In0.18Ga0.82N well layer and a GaN barrier *** surface morphology of the MQW structures is observed by an atomic force microscope(AFM),which indicates the presence of islands of several tens of nanometers in height on the *** high resolution x−ray diffraction(XRD)θ/2θscan is carried out on the symmetric(0002)of the InGaN/GaN MQW *** least four order satellite peaks presented in the XRD spectrum indicate that the thickness and alloy compositions of the individual quantum wells are repeatable throughout the active *** the 364 nm GaN band edge emission,two main emissions of blue and amber light from these MQWs are found,which possibly originate from the carrier recombinations in the InGaN/GaN QWs and InGaN quasi-quantum dots embedded in the QWs.