Semiconducting Carbon Nanotube/Fullerene Blended Heterojunctions for Photovoltaic Near-Infrared Photon Harvesting

作     者：Dominick J. Bindl Adam S. Brewer Michael S. Arnold 

作者机构：1509 University Ave. Materials Science and Engineering Dept. University of Wisconsin-Madison Madison WI 53706 USA 

出 版 物：《Nano Research》 (纳米研究（英文版）)

年 卷 期：2011年第4卷第11期

页      面：1174-1179页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学] 

基　　金：Acknowledgements The authors acknowledge the assistance of Frederick C. Prehn in sample preparation. This work was supported by the National Science Foundation (Grant No. DMR- 0905861) 

主　　题：Carbon nanotube bulk heterojunction photovoltaic photodetector near-infrared (NIR) 

摘      要：We demonstrate that the near-infrared （NIR） absorptivity of semiconducfing single-walled carbon nanotubes （s-SWCNTs） can be harnessed in blended heterojunctions with the fullerene derivative [6,6]-phenyl-C61-butyric acid methyl ester （PCBM）. Photogenerated charge separation is efficiently driven by the ultrahigh interracial area of the blends and the favorable energy offsets between the two materials. NIR-sensitive photovoltaic and photodetector devices utilizing the stack （indium tin oxide/ca. 10 nm s-SWCNT：PCBM/100 nm CJ10 nm 2,9- dimethyl-4,7-diphenyl-],10-phenanthroline （BCP）/Ag） were fabricated with NIR power conversion efficiencies 〉1.3% and peak, zero bias external quantum efficiency of 18% at λ = 1205 nm.