Metallurgical challenges in microelectronic 3D IC packaging technology for future consumer electronic products

作     者：K. N. TU TIAN Tian 

作者机构：Department of Mechanical and Biomedical Engineering City University of Hong Kong Department of Materials Science and Engineering University of California at Los Angeles 

出 版 物：《Science China(Technological Sciences)》 (中国科学（技术科学英文版）)

年 卷 期：2013年第56卷第7期

页      面：1740-1748页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0810[工学-信息与通信工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 0812[工学-计算机科学与技术（可授工学、理学学位）] 

主　　题：3D IC packaging microbump localized heating 

摘      要：Metallurgical challenges in controlling the microstructural stability of Cu and solder microbumps in 3D IC packaging technol-ogy are discussed. Using uni-directional oriented nanotwinned Cu, the controlled growth of oriented Cu6Sn5 on the nanotwinned Cu and its transformation to Cu3Sn without Kirkendall voids have been achieved. In order to join a stack of Si chips into a 3D device, multiple reflows of solder microbumps may be required; we consider localized heating to do so by the use of self-sustained explosive reaction in multi-layered Al/Ni thin films of nano thickness. It avoids re-melting of those solder joints which have been formed already in the 3D stacking structure.