In situ Raman spectroscopy of topological insulator Bi2Te3 films with varying thickness

作     者：Chunxiao Wang Xiegang Zhu Louis Nilsson Jing Wen GuangWang Xinyan Shan Qing Zhang Shulin Zhang Jinfeng Jia Qikun Xue 

作者机构：State Key Laboratory for Low-Dimensional Quantum Physics Department of Physics Tsinghua University Beijing 100084 China DepartmentofPhysics Peking University Beijing 100871 China Department of Physics andAstronomy and Interdisciplinary Nanoscience Center Aarhus University 8000 Aarhus C Denmark Department of Physics Shanghai Jiaotong University Shanghai200240 China 

出 版 物：《Nano Research》 (纳米研究（英文版）)

年 卷 期：2013年第6卷第9期

页      面：688-692页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 081702[工学-化学工艺] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0817[工学-化学工程与技术] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：supported by the Ministry of Science and Technology of the People’s Republic of China (MOST) of China (973 Project) 国家自然科学基金 

主　　题：topological insulator in situ Raman spectroscop^surface phonon mode thin film 

摘      要：Topological insulators （TIs） are a new state of quantum matter with a band gap in bulk and conducting surface states. In this work, the Raman spectra of topological insulator Bi2Te3 films prepared by molecular beam epitaxy （MBE） have been measured by an in situ ultrahigh vacuum （UHV）-MBE-Raman spectroscopy system. When the thickness of Bi2Te3 films decreases from 40 quintuple-layers （QL） to 1 QL, the spectral characteristics of some Raman modes appearing in bulk Bi2Te3 vary and a new vibrational mode appears, which has not been reported in previous studies and might be related to quantum size effects and symmetry breaking. In addition, an obvious change was observed at 3 QL when a Dirac cone formed. These results offer some new information about the novel quantum states of TIs.