Morphological characterization of selectively overgrown GaN via lateral epitaxy

作     者：Wang Yanguo 

作者机构：中科院物理所 北京电子显微镜开放实验室 北京 100080 

出 版 物：《电子显微学报》 (Journal of Chinese Electron Microscopy Society)

年 卷 期：2001年第20卷第4期

页      面：292-293页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

主　　题：GaN Morphological characterization of selectively overgrown GaN via lateral epitaxy 

摘      要：IntroductionGaN has attracted a lot of research attention because it has lower Ohmic contact resistance, large electron saturation velocity and a large breakdown field, combined with excellent thermal conductivity and stability, making it an excellent material for high-temperature, high-power and high-brightness optoelectronic devices such as field effect transistors (FET), junction (FET), bipolar transistors and photodiodes[1]. Since threading dislocations resulting from large lattice mismatach and the difference between thermal expansion coefficients of epitaxial GaN and substrate severely degrade the optical and electric qualities of the GaN layer, high quality GaN is indeed required for manufacture of high performance optical device[2]. Characterization of the microstructures of selectively lateral overgrowth of epitaxial GaN using SEM is presented in this work with focus on fully understanding evolution of the morphology and dislocation distribution that occurs in the different growth situations in order for establishment of procession-microstructure-properties interrelations.