InGaAs Photodetectors Cut-off at 1.9μm Grown by Gas-Source Molecular Beam Epitaxy
在煤气来源的分子的横梁取向附生种的 1.9 亩 m 截止的 InGaAs 光电探测器作者机构：StateKeyLaboratoryofFunctionalMaterialsforInformaticsShanghaiInstituteofMicrosystemandInformationTechnologyChineseAcademyofSciencesShanghai200050
出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)
年 卷 期：2005年第22卷第1期
页 面：250-253页
核心收录：
学科分类：07[理学] 070202[理学-粒子物理与原子核物理] 0702[理学-物理学]
主 题：VAPOR-PHASE EPITAXY DARK CURRENT PHOTODIODES WAVELENGTH
摘 要：Using a linear graded InxGa1-xAs as the buffer layer,positive-intrinsic-negative wavelength-extended In0.6Ga0.4 As photodetectors with 50% cut-offwavelength of 1.9mum at room temperature were grown by using gas-source molecular beam epitaxy, andtheir performance over a wide temperature range has been extensively investigated. The detectorsshow typical dark current at bias voltage 50mV and the resistance-area product R(0)A of7nA/765Omegacm(2) and 31pA/404kOmegacm(2) at 290K and 210K, respectively. The thermal activationenergy of the dark current in the temperature range 250-350K is 0.488eV.
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