Enhancing the high-temperature stability of OFETs by inducing D-A stacking in P(NDI2OD-T2) films
通过诱导P(NDI2OD-T2)薄膜形成D-A堆积结构提高OFETs的高温电学性能稳定性作者机构:Laboratory of Molecular Materials and DevicesDepartment of Materials ScienceFudan UniversityShanghai 200433China State Key Laboratory of Molecular Engineering of Polymers and Department of Macromolecular ScienceFudan UniversityShanghai 200433China
出 版 物:《Science China Materials》 (中国科学(材料科学)(英文版))
年 卷 期:2025年第68卷第1期
页 面:117-124页
核心收录:
学科分类:080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术(可授工学、理学学位)] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 080502[工学-材料学]
基 金:financially supported by the Nation Key R&D Program China (2022YFB3603804) Natural Science Foundation of Shanghai (22ZR1407800) Postdoctoral Science Foundation of China (2021M700800)
主 题:high-temperature stability D-A stacking P(NDI2OD-T2) electrical properties OFETs
摘 要:High-temperature stability of organic field-effect transistors(OFETs)is critical to ensure its long-term reliable operation under various environmental *** molecular packing of donor-acceptor(D-A)conjugated polymers is closely related to the electrical performance stability in ***,we choose poly[[N,N′-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5′-(2,2′-bithiophene)]as a modal system to reveal the relationship between the molecular stacking and electrical stability in high-temperature *** results demonstrate that the films with D-A moieties in alternate stacking have better electrical thermal stability compared to normal donor-donor(D-D)*** D-A stacking configuration alternates donor and acceptor units along the out-of-plane direction,while the D-D stacking involves D-D and A-A stacking *** structural transition from D-D to D-A is captured at a treated temperature range of 225±250°*** to the tighter packing arrangement along theπ-πand lamellar directions,the electron mobility of the D-A stacked films reaches up to 0.23 cm^(2)/V·s,a 50%increase as compared to the D-D stacking ***,the D-A stacked films indicate superior electrical performance stability with mobility retaining 100%at 250°C during high-temperature cycling *** result highlights that the manipulation of conjugated polymer closely stacked structures can significantly enhance the thermal stability and durability of semiconductor devices.