Wide dynamic range CMOS image sensor with in-pixel double-exposure and synthesis

作     者：李斌桥 孙忠岩 徐江涛 

作者机构：School of Electronics and Information EngineeringTianjin University 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2010年第31卷第5期

页      面：73-77页

核心收录：

学科分类：0810[工学-信息与通信工程] 080202[工学-机械电子工程] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 080402[工学-测试计量技术及仪器] 0835[工学-软件工程] 0802[工学-机械工程] 081002[工学-信号与信息处理] 

基　　金：supported by the National Natural Science Foundation of China(Nos.60806010,60976030) the Tianjin Innovation Special Funds for Science and Technology,China(No.05FZZDGX00200) 

主　　题：CMOS image sensor double exposure dynamic range five-transistor active pixel 

摘      要：A wide-dynamic-range CMOS image sensor（CIS） based on synthesis of a long-time and a short-time exposure signal in the floating diffusion（FD） of a five-transistor active pixel is *** optimized pixel operation,the response curve is compressed and a wide dynamic range image is obtained.A prototype wide-dynamic-range CMOS image sensor was developed with a 0.18μm CIS *** the double exposure time 2.4 ms and 70 ns,the dynamic range of the proposed sensor is 80 dB with 30 frames per second（fps）.The proposed CMOS image sensor meets the demands of applications in security surveillance systems.