Quantum Mechanical Study on Tunnelling and Ballistic Transport of Nanometer Si MOSFETs

作     者：邓惠雄 姜向伟 唐黎明 

作者机构：State Key Laboratory for Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences PO Box 912 Beijing 100083 Department of Applied Physics Hunan University Changsha 410082 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2010年第27卷第5期

页      面：196-199页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 070201[理学-理论物理] 0704[理学-天文学] 0702[理学-物理学] 

基　　金：Supported by the National Basic Research Program of China under Grant No G2009CB929300  and the National Natural Science Foundation of China under Grant Nos 60521001 and 60776061 

主　　题：calculation ballistic transport characteristics 

摘      要：Using self-consistent calculations of million-atom SchrSdinger-Poisson equations, we investigate the I-V characteristics of tunnelling and ballistic transport of nanometer metal oxide semiconductor field effect transistors （MOSFET） based on a full 3-D quantum mechanical simulation under nonequilibtium condition. Atomistic empirical pseudopotentials are used to describe the device Hamiltonian and the underlying bulk band structure. We find that the ballistic transport dominates the I-V characteristics, whereas the effects of tunnelling cannot be neglected with the maximal value up to 0.8mA/μm when the channel length of MOSFET scales down to 25 nm. The effects of tunnelling transport lower the threshold voltage Vt. The ballistic current based on fully 3-D quantum mechanical simulation is relatively large and has small on-off ratio compared with results derived from the calculation methods of Luo et al.