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Determination of surface structure and the depth profile of silica glass by infrared spectroscopy

Determination of surface structure and the depth profile of silica glass by infrared spectroscopy

作     者:C. Z. Tan 

作者机构:Laboratory of Solid State Microstructure and Department of Materials Science and Engineering Nanjing University 210093 Nanjing China Institut für Mineralogie Freie Universitt Berlin 14195 Berlin Germany 

出 版 物:《光学精密工程》 (Optics and Precision Engineering)

年 卷 期:2005年第13卷第4期

页      面:413-420页

核心收录:

学科分类:08[工学] 0805[工学-材料科学与工程(可授工学、理学学位)] 080502[工学-材料学] 

基  金:This work was supported by the Cheung Kong Scholars Program and the National High Technology Research and Development(863)Program of China 

主  题:硅石 光谱 红外线 表面结构 光学材料 

摘      要:The surface structure and properties are different from those of the bulk, depending on the substrate materials and deposition condition, and playing an important role in precise optical components. The conventional spectroscopic methods to monitor the surface structure are restricted only in several layers of molecules. It is known that the penetration depth of the incident light increases with its wavelength and decreases with the angle of incidence. Thus infrared spectroscopy provides a powerful means for determination of surface structure and the depth profile up to micrometers. By recording the reflection spectra at different angles of incidence, the surface structure and its depth profile can be monitored successively. Further, the incident field has the subcomponents parallel and perpendicular to the surface, which excite the transverse and longitudinal optic modes, respectively. Change of the polarization direction of the incident light provides a practical function to study anisotropic property of the surface and the interaction between the transverse and longitudinal optic modes. In this work, infrared spectrophotometer was applied to investigate the depth profile in microstructure of silica glass. Combining with the glass fiber system, this technique can be used for in-situ control of the deposition process. In comparing with ellipsometry, this method reveals both structural and constitutional information.

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