Growth mechanism and optical properties of InGaAs/GaAsSb Su-perlattice structures

作     者：JIN Chuan XU QingQing CHEN JianXin 

作者机构：Key Laboratory of Infrared Imaging Materials and Detectors Shanghai Institute of Technical Physics Chinese Academy of Sciences 

出 版 物：《Science China(Physics,Mechanics & Astronomy)》 (中国科学：物理学、力学、天文学（英文版）)

年 卷 期：2015年第58卷第4期

页      面：40-44页

核心收录：

学科分类：081704[工学-应用化学] 07[理学] 08[工学] 0817[工学-化学工程与技术] 0703[理学-化学] 070301[理学-无机化学] 

基　　金：supported by the National Natural Science Foundation of China(Grant No.61176082) the National Basic Research Program of China(Grant No.2012CB619203) 

主　　题：GaAsSb InGaAs/GaAsSb superlattice photoluminescence 

摘      要：In this paper,we report the growth of Ga As Sb and its crystalline property under various Sb2/As2 flux ratios and growth *** simulated the incorporation difference between Sb2 and As2 by using a non-equilibrium thermodynamic *** study of Ga As Sb growth has successfully yielded,high quality In Ga As/Ga As Sb Type II superlattice for which the optical properties were characterized by photoluminescence at different excitation power and temperature.A blue-shift in luminescence peak energy with excitation power was observed and was described by a non-equilibrium carrier density *** measured and analyzed the dependences of peak energy and integrated intensity on *** thermal processes were observed from intensity dependent photoluminescence measurements.