Influence of sputtering power on properties of ZnO thin films fabricated by RF sputtering in room temperature

作     者：Satoru MATSUMOTO 

作者机构：Department of Electrical EngineeringKeio UniversityTokyoJapan 

出 版 物：《Science China(Information Sciences)》 (中国科学:信息科学(英文版))

年 卷 期：2012年第55卷第4期

页      面：951-955页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：supported by National Natural Science Foundation of China(Grant Nos.60776012,60977016) National Basic Research Program of China(Grant No.2011CB309607) 

主　　题：ZnO thin film transparent oxide semiconductor sputtering power room temperature process 

摘      要：High mobility and c-axis orientated ZnO thin films were deposited on glass substrates using RF sputtering method at room *** properties of ZnO thin films were investigated by X-ray diffraction (XRD).Surface morphology and roughness were studied with scanning electron microscopy (SEM) and atomic force microscopy (AFM).Electrical properties were measured at room temperature using a Hall effect measurement *** influence of sputtering power on characteristics of ZnO thin films is *** results indicate that the sputtering powers have great influence on the crystal quality and mobility of ZnO thin *** using optimized sputtering conditions,high crystal quality ZnO thin films with Hall mobility of 34 cm 2 /V·s at room temperature were obtained.