Study of strain and compostion of the self—organized GE dots by grazing incident X—ray diffraction

作     者：X.Jiang Z.Jiang W.Jiang Q.Jia W.Zheng D.Xian X.Wang 

作者机构：BeijingSynchrotronRadiationFacilityInstituteofHighEnergyPhesicsChineseAcademyofSciencesP.O.Box918YuquanRoadBeijing100039People’sRepublicofChina SurfacephysicsLaboratoryFudanUniversityShanghai 

出 版 物：《Beijing Synchrotron Radiation Facility》 (北京同步辐射装置（英文版）)

年 卷 期：2001年第2期

页      面：194-197,页

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

主　　题：X射线衍射分析 自组织 锗薄膜生长 硅基底 半导体材料 

摘      要：Grazing incident X-ray diffraction at different grazing angles for self-organized Ge dots grown on Si(001) are carried out and lattice constant expansions of 1.2?parallel to the surface as compared with the Si lattice are found within the Ge dots.A 3.1?lattice expansion of the Ge dots along the growth direction is also fund by ordinary X-ray(004) *** to the Poisson equation and the Vegard law,our results infer that the Ge dot should be a partially strain relaxed SiGe alloy with Ge content of abuot 55?2001 Elsevier Science *** rights reserved.