Ultrasonic spray pyrolysis deposition of SnSe and SnSe_2 using a single spray solution

作     者：Jorge Sergio Narro-Rios Manoj Ramachandran Dalia Martínez-Escobar Aarón Snchez-Jurez 

作者机构：Centro de investigación en EnergíaUNAMP.O.Box 3462580 TemixcoMorelosMxico 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2013年第34卷第1期

页      面：12-15页

核心收录：

学科分类：0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0703[理学-化学] 0702[理学-物理学] 

基　　金：carried out with financial assistance from the DGAPA- PAPIIT project (IN 113409) 

主　　题：SnSe SnSe2 ultrasonic spray pyrolysis technique 

摘      要：Thin films of SnSe and SnSe2 have been deposited using the ultrasonic spray pyrolysis（USP） technique.To the best of our knowledge this is the first report of the deposition of SnSe and SnSe2 thin films using a single spray solution.The use of a single spray solution for obtaining both a p-type material,SnSe,and an n-type material,SnSe2,simplifies the deposition technique.The SnSe2 thin films have a bandgap of 1.1 eV and the SnSe thin films have a band gap of 0.9 eV.The Hall measurements were used to determine the resistivity of the thin films.The SnSe2 thin films show a resistivity of 36.73 Ωcm and n-type conductivity while the SnSe thin films show a resistivity of 180 Ωcm and p-type conductivity.