Oxygen Induced Limitation on Grain Growth in RF Sputtered Indium Tin Oxide Thin Films
Oxygen Induced Limitation on Grain Growth in RF Sputtered Indium Tin Oxide Thin Films作者机构：Department of Electrical Engineering and Computer Science South Dakota State University Brookings SD 57007 USA Department of Physics South Dakota State University Brookings SD 57007 USA
出 版 物：《Journal of Energy and Power Engineering》 (能源与动力工程（美国大卫英文）)
年 卷 期：2014年第8卷第7期
页 面：1232-1236页
学科分类：08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学]
基 金：Acknowledgement The authors would like to thank Dr. Q. Qiao and V. Swaminathan for providing AFM measurements. This work has been supported by National Science Foundation/EPSCoR Grant No. 0903804 and by the State of South Dakota. Also acknowledged are National Science Foundation Grant No.IIP-1248454 South Dakota Performance Improvement Funds and SDSU Research Scholarship Support Fund
主 题：Sputtering thin film grain growth.
摘 要：ITO （indium tin oxide） thin films were deposited onto glass substrates by RF （radio frequency） magnetron sputtering to study variation of grain growth in pure argon and 99% argon plus 1% oxygen at different substrate temperatures. The average grain size increased with the increasing substrate temperature in pure argon. However, in oxygen presence environment the grain growth is limited at above 150 ℃. The films optoelectronic properties were evaluated. It was found that 200 nm ITO films prepared at 220 ℃ substrate temperature in pure argon possessed optimum sheet resistance of 10 Ω/sq. The transmittance oflTO films was enhanced with increasing the substrate temperature in pure argon but limited by the presence of excess oxygen.
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