Effects of defect states on the performance of CuInGaSe_2 solar cells

作     者：万福成 汤富领 薛红涛 路文江 冯煜东 芮执元 

作者机构：State Key Laboratory of Gansu Advanced Non-ferrous Metal MaterialsDepartment of Materials Science and EngineeringLanzhou University of Technology Science and Technology on Surface Engineering LaboratoryLanzhou Institute of Physics 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2014年第35卷第2期

页      面：76-81页

核心收录：

学科分类：08[工学] 080502[工学-材料学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：Project supported by the National Natural Science Foundation of China(Nos.11164014,11364025,51065014) the Science and Technology Pillar Program of Gansu Province(No.1204GKCA057) 

主　　题：device modeling defect states solar cell conversion efficiency 

摘      要：Device modeling has been carried out to investigate the effects of defect states on the performance of ideal CulnGaSe2 （CIGS） thin film solar cells theoretically. The varieties of defect states （location in the band gap and densities） in absorption layer CIGS and in buffer layer CdS were examined. The performance parameters： open-circuit voltage, short-circuit current, fill factor, and photoelectric conversion efficiency for different defect states were quantitatively analyzed. We found that defect states always harm the performance of CIGS solar cells, but when defect state density is less than 10 14 cm-3 in CIGS or less than 10 18 cm-3 in CdS, defect states have little effect on the performances. When defect states are located in the middle of the band gap, they are more harmful. The effects of temperature and thickness are also considered. We found that CIGS solar cells have optimal performance at about 170 K and 2 μm of CIGS is enough for solar light absorption.