Influence of Rare ***3＋ Doping on the Structural, Microstructure and Magnetic Properties of ZnO Bulk and Thin Film Systems

作     者：Ghulam Murtaza Rai Muhamlnad Azhar Iqbal Yongbingxu Iain Gordon Will wenzhang 

作者机构：巴基斯坦旁遮普大学物理系拉合尔54590 英国约克大学电子部自旋电子学实验室约克YO105DD 

出 版 物：《Chinese Journal of Chemical Physics》 (化学物理学报（英文）)

年 卷 期：2011年第24卷第3期

页      面：353-357,I0004页

核心收录：

学科分类：07[理学] 

主　　题：Diluted magnetic semiconductor Structural analysis Scanning electron mi- croscope Magnetic property 

摘      要：We have investigated the doping behavior of rare earth element holmium （Ho3＋） in ZnO semiconductor. The structural, microstructure, and magnetic properties of Zn1-xHoxO （x=0.0, 0.04, and 0.05） thin films deposited on Si（100） substrate by thermal evaporation technique were studied. The ceramic targets were prepared by conventional solid state ceramic technique. The pallets used as target were final sintered at 900℃ in the presence of N2 atmosphere. The experimental results of X-ray diffraction （XRD） spectra, surface morphology, and magnetic properties show that the Ho3＋ doped ZnO thin films has a strong influence on the materials properties. The higher angle shift in peak position and most preferred （101） orientation were observed in XRD pattern. These spectra confirmed the substitution of Ho3＋ in ZnO lattice. The surface morphology and stoichiometry for both bulk and thin films were analyzed by scanning electron microscopy and energy dispersive spectroscopy. It was observed that grain size decreases with the increase of Ho3＋. Room temperature ferromagnetism was observed for Zn0.95Ho0.050 films. The ferromagnetism might be attributed to the substitution of Ho ions for Zn2＋ in ZnO lattices.