High Performance Ring Oscillators from 10-nm Wide Silicon Nanowire Field-Effect Transistors

作     者：Ruo-Gu Huang Douglas Tham Dunwei Wang James R. Heath 

作者机构：Department of Electrical Engineering Calilfomia Institute of Technology MC 136-93 Pasadena CA 91125 USA Division of Chemistry and Chemical Engineering California Institute of Technology MC 127-72 Pasadena CA 91125 USA Department of Chemistry Boston College 140 Commonwealth Ave Chestnut Hill Massachusetts 02467 USA 

出 版 物：《Nano Research》 (纳米研究（英文版）)

年 卷 期：2011年第4卷第10期

页      面：1005-1012页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 080904[工学-电磁场与微波技术] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：The authors acknowledge H. Ahmad and Y. -S. Shin for graphics assistance. This work was funded by the National Science Foundation under Grant CCF-0541461 and the Department of Energy (DE-FG02-04ER46175). D. Tham gratefully acknowledges support by the KAUST Scholar Award 

主　　题：Silicon nanowire (SiNW) field-effect transistor (FET) surface treatment inverter ring oscillator 

摘      要：We explore 10-nm wide Si nanowire （SiNW） field-effect transistors （FETs） for logic applications, via the fabrication and testing of SiNW-based ring oscillators. We report on SiNW surface treatments and dielectric annealing, for producing SiNW FETs that exhibit high performance in terms of large on/off-state current ratio （-10s）, low drain-induced barrier lowering （-30 mV） and low subthreshold swing （-80 mV/decade）. The performance of inverter and ring-oscillator circuits fabricated from these nanowire FETs are also explored. The inverter demonstrates the highest voltage gain （-148） reported for a SiNW-based NOT gate, and the ring oscillator exhibits near rail-to-rail oscillation centered at 13.4 MHz. The static and dynamic characteristics of these NW devices indicate that these SiNW-based FET circuits are excellent candidates for various high-performance nanoelectronic applications.