Studies on the electronic structures of three-dimensional topological insulators by angle resolved photoemission spectroscopy
Studies on the electronic structures of three-dimensional topological insulators by angle resolved photoemission spectroscopy作者机构：1. Department of Physics University of Oxford Clarendon Laboratory Parks Road Oxford OX1 3PU UK2. Stanford Institute for Materials and Energy Sciences SLAC National Accelerator Laboratory 2575 Sand Hill Road Menlo Park CA 94025 USA3. Geballe Laboratory for Advanced Materials Departments of Physics and Applied Physics Stanford University Stanford CA 94305 USA
出 版 物：《Frontiers of physics》 (物理学前沿（英文版）)
年 卷 期：2012年第7卷第2期
页 面：175-192页
核心收录：
学科分类：080801[工学-电机与电器] 081704[工学-应用化学] 0808[工学-电气工程] 07[理学] 08[工学] 0817[工学-化学工程与技术] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0703[理学-化学] 070301[理学-无机化学]
主 题：topological insulator (TI) photoemission ARPES
摘 要：Three-dimensional （3D） topological insulators represent a new state of quantum matter with a bulk gap and odd number of relativistic Dirac fermions on the surface. The unusual surface states of topological insulators rise from the nontrivial topology of their electronic structures as a result of strong spin-orbital coupling. In this review, we will briefly introduce the concept of topological insu- lators and the experimental method that can directly probe their unique electronic structure： angle resolved photoemission spectroscopy （ARPES）. A few examples are then presented to demonstrate the unique band structures of different families of topological insulators and the unusual properties of the topological surface states. Finally, we will briefly discuss the future development of topological quantum materials.
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