Intersubband transitions in In_xAl_(1-x)N/In_yGa_(1-y)N quantum well operating at 1.55 μm

作     者：Hassen Dakhlaoui 

作者机构：Department of PhysicsCollege of Science for Girls 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2014年第23卷第9期

页      面：394-398页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 07[理学] 0809[工学-电子科学与技术（可授工学、理学学位）] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0704[理学-天文学] 0702[理学-物理学] 

主　　题：intersubband transition delta doping InGaN/GaN quantum well 

摘      要：In this paper, we theoretically study the effects of doping concentration ND and an external electric field on the intersubband transitions in InxAl（l-x）N/InyGa（l-y）N single quantum well by solving the Schrodinger and Poisson equations self-consistently. Obtained results including transition energies, the band structure, and the optical absorption have been discussed. The lowest three intersubband transitions （E2 -El）, （E3 -El）, and （E3 -E2） are calculated as functions of doping concentration ND. By increasing the doping concentration ND, the depletion effect can be reduced, and the ionized electrons will compensate the internal electric field which results from the spontaneous polarization. Our results show that an optimum concentration ND exists for which the transition 0.8 eV （1.55 μm） is carried out. Finally, the dependence of the optical absorption α13（ω） on the external electric field and doping concentration is studied. The maximum of the optical absorption can be red-shifted or blue-shifted through varying the doping concentration and the external electric field. The obtained results can be used for designing optical fiber telecommunications operating at 1.55 μm.