Growth process,defects,and dopants of bulkβ-Ga_(2)O_(3)semiconductor single crystals

作     者：Yan-shen Wang Ming-zhi Zhu Yuan Liu 

作者机构：School of Materials Science and EngineeringTsinghua UniversityBeijing 100084China Key Laboratory for Advanced Materials Processing Technology(Ministry of Education)Beijing 100084China 

出 版 物：《China Foundry》 (中国铸造（英文版）)

年 卷 期：2024年第21卷第5期

页      面：491-506页

核心收录：

学科分类：07[理学] 0806[工学-冶金工程] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0702[理学-物理学] 

基　　金：Ministry of Education, MOE Chinese Mechanical Engineering Society 

主　　题：β-Ga_(2)O_(3) single-crystal growth defects dopants semiconductor 

摘      要：β-gallium oxide(β-Ga2O3),as the typical representative of the fourth generation of semiconductors,has attracted increasing attention owing to its ultra-wide bandgap,superior optical properties,and excellent tolerance to high temperature and *** to the single crystals of other semiconductors,high-quality and large-sizeβ-Ga_(2)O_(3)single crystals can be grown with low-cost melting methods,making them highly *** this review,the growth process,defects,and dopants ofβ-Ga_(2)O_(3)are primarily ***,the growth process(e.g.,decomposition,crucible corrosion,spiral growth,and development)ofβ-Ga_(2)O_(3)single crystals are summarized and compared in ***,the defects ofβ-Ga_(2)O_(3)single crystals and the influence of defects on Schottky barrier diode(SBD)devices are emphatically ***,the influences of impurities and intrinsic defects on the electronic and optical properties ofβ-Ga_(2)O_(3)are also briefly *** this comprehensive analysis,the article offers a concise summary of the current state,challenges and prospects ofβ-Ga_(2)O_(3)single crystals.