咨询与建议

看过本文的还看了

相关文献

该作者的其他文献

文献详情 >Light-activated tautomeric tra... 收藏

Light-activated tautomeric transition enhanced buried heterointerface for highly efficient and ultraviolet robust perovskite solar cells

作     者:Sheng Jiang Shaobing Xiong Shuaifei Mao Yefan Zhang Dongyang Zhao Xiaomeng You Vladimir Gaishun Dmitry Kovalenk Qinye Bao 

作者机构:School of Physics and Electronic Science East China Normal University Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception Institute of OptoelectronicsFudan University Institute of Functional Nano & Soft Materials (FUNSOM) Soochow University Shanghai Key Laboratory of Magnetic Resonance East China Normal University Department of Physics and Information Technologies Francisk Skorina Gomel State University Collaborative Innovation Center of Extreme Optics Shanxi University 

出 版 物:《Science China Chemistry》 (中国科学:化学(英文版))

年 卷 期:2024年

核心收录:

学科分类:08[工学] 080502[工学-材料学] 0805[工学-材料科学与工程(可授工学、理学学位)] 

摘      要:The buried heterointerface of perovskite solar cells(PSCs) suffers from serious nonradiative recombination and ultraviolet(UV)light stress, relentlessly limiting further increase in their power conversion efficiency and operational stability. Herein, we develop an emerging strategy of incorporating a thin UV-activated tautomeric transition layer onto underlying charge transport layer and then depositing perovskite layer to construct an efficient hole-selective buried heterojunction. It is revealed that the UV-activated tautomeric transition interlayer not only improves upper perovskite crystallinity, diminishes thermionic loss for collecting hole and passivates defect site at such buried contact that significantly promote charge transport and suppress nonradiative recombination, but also effectively protects adjacent perovskite from UV degradation through “UV sunscreeneffect. As a result, we report a remarkably enhanced efficiency of 24.76% compared to 22.02% of the control device. More importantly, the achieved high-efficiency PSC features excellent resistance against UV radiation at 365 nm of 100 and 850 mW cm-2, which are approximately 21 and 184 times of UV flux(4.6 mW cm-2) under AM 1.5G solar illumination. This work provides a promising approach of strengthening buried heterointerface for simultaneous realization of highly efficient and UV robust PSCs.

读者评论 与其他读者分享你的观点

用户名:未登录
我的评分