FORWARD GATED-DIODE R-G CURRENT METHOD: A SIMPLE NOVEL TECHNIQUE FOR CHARACTERIZING LATERAL LIGHTLY DOPING REGION OF LDD MOSFET's

作     者：He Jin Huang Aihua Zhang Xing Huang Ru Wang Yangyuan(institute of Micro-electronics, Peking University, Beijing 100871) He Jin Huang Aihua Zhang Xing Huang Ru Wang Yangyuan(institute of Micro-electronics, Peking University, Beijing 100871)

作者机构：Institute of Micro-electronicsPeking UniversityBeijing 100871 

出 版 物：《Journal of Electronics(China)》 (电子科学学刊（英文版）)

年 卷 期：2001年第18卷第2期

页      面：188-192页

学科分类：0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 

基　　金：Sponsored by Motorola CPTL(Contract No:MSPSDDLCHINA-0004) 

主　　题：Gated-diode R-G current MOSFET LDD region Interface state Interface state density Characterization 

摘      要：This paper presents a simple novel technique-forward gated-diode R-G current method-to determine the lateral lightly-doped source/drain (S/D) region interface state density and effective surface doping concentration of the lightly-doped drain (LDD) N- MOSFET s simultaneously. One interesting result of the numerical analysis is the direct characterization of the interface state density and characteristic gate voltage values corresponding to LDD effective surface doping concentration. It is observed that the S/D N- surface doping concentration and corresponding region s interface state density are R-G current peak position and amplitude dependent, respectively. It is convincible that the proposed method is well suitable for the characterization of deep sub-micron MOSFET s in the current ULSI technology.