InP-to-InGaAs interfacial strain grown by using tertiarybutylarsine and tertiarybutylphosphine

作     者：徐现刚 崔得良 唐喆 郝霄鹏 K.Heime 

作者机构：State Key Laboratory of Crystal Materials Shandong University Jinan 250100 China 

出 版 物：《Science China Mathematics》 (中国科学：数学（英文版）)

年 卷 期：2002年第45卷第5期

页      面：655-660页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0701[理学-数学] 

基　　金：This work was supported by the National Natural Science Foundation of China (Grant No. 60025409) Alexander von Humboldt Foundation 

主　　题：MOVPE, InGaAs/InP, strain, TBAs, TBP. 

摘      要：Lattice-matched InGaAs/InP heterostructures have been grown by using metalorganic vapor phase epitaxy (MOVPE) with tertiarybutylarsine (TBAs), tertiarybutylphosphine (TBP) as the group Ⅴ sources. The results of X-ray diffraction on InGaAs/InP single herterostructure show that there is a compressive-strained interfacial layer at the InP-to-lnGaAs interface. X-ray diffraction of InGaAs/InP superlattices is successfully simulated by using the same interfacial layer. TBAs purging of InP surface has a significant influence on the interfacial strain. A novel gas switching sequence, which switches group Ⅲ to the run line earlier than TBAs, is proposed to reduce this interfacial strain. As a result,the average compressive strain of superlattices decreases, and a blue shift of photoluminescence (PL)peak energy and narrowing in PL width are obtained.