Structural design of mid-infrared waveguide detectors based on InAs/GaAsSb superlattice

作     者：Pei, Jin-Di Chai, Xu-Liang Wang, Yu-Peng Zhou, Yi 裴金狄;柴旭良;王昱彭;周易

作者机构：Univ Chinese Acad Sci Hangzhou Inst Adv Study Sch Phys & Optoelect Engn Hangzhou 310024 Peoples R China Chinese Acad Sci Shanghai Inst Tech Phys Key Lab Infrared Imaging Mat & Detectors Shanghai 200083 Peoples R China 

出 版 物：《JOURNAL OF INFRARED AND MILLIMETER WAVES》 (Journal of Infrared and Millimeter Waves)

年 卷 期：2024年第43卷第4期

页      面：457-463页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0804[工学-仪器科学与技术] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0811[工学-控制科学与工程] 0702[理学-物理学] 

基　　金：National Natural Science Foundation of China (NSFC) (NSFC) [61904183, 61974152, 62104237, 62004205] Youth Innovation Promotion Association of the Chinese Academy of Sciences [Y202057] Shanghai Science and Technology Committee Rising-Star Program [20QA1410500] Shanghai Sail Plans [21YF1455000] 

主　　题：InAs/GaAsSb superlattice waveguide detector evanescent coupling GaAsSb waveguide 

摘      要：In the realm of near-infrared spectroscopy, the detection of molecules has been achieved using on-chip waveguides and resonators. In the mid-infrared band, the integration and sensitivity of chemical sensing chips are often constrained by the reliance on off-chip light sources and detectors. In this study, we demonstrate an InAs/ GaAsSb superlattice mid-infrared waveguide integrated detector. The GaAsSb waveguide layer and the InAs/ GaAsSb superlattice absorbing layer are connected through evanescent coupling, facilitating efficient and highquality detection of mid-infrared light with minimal loss. We conducted a simulation to analyze the photoelectric characteristics of the device. Additionally, we investigated the factors that affect the integration of the InAs/GaAsSb superlattice photodetector and the GaAsSb waveguide. Optimal thicknesses and lengths for the absorption layer are determined. When the absorption layer has a thickness of 0. 3 mu m and a length of 50 mu m, the noise equivalent power reaches its minimum value, and the quantum efficiency can achieve a value of 68. 9%. The utilization of waveguide detectors constructed with III-V materials offers a more convenient means of integrating mid-infrared light sources and achieving photoelectric detection chips.