Quantitative Model for the Surface-related Electron Transfer in CdS Quantum Dots

作     者：HUANG Chao-biao WU Chuan-liu LI Shu-yan LAI Jin-ping ZHAO Yi-bing 

作者机构：College of Chemistry and Life Science Zhejiang Normal University Jinhua 321004 P. R. China Department of Chemistry and the Key Laboratory of Analytical Sciences of the Ministry of Education College of Chemistry and Chemical Engineering Xiamen University Xiamen 361005 P. R. China 

出 版 物：《Chemical Research in Chinese Universities》 (高等学校化学研究（英文版）)

年 卷 期：2009年第25卷第1期

页      面：17-24页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0703[理学-化学] 

基　　金：Supported by the Measurement and Testing Center of Zhejiang Province  China(No.02079) 

主　　题：Photoluminescence Quantitative model CdS quantum dots Surface 

摘      要：The influence of surface S^2- dangling bonds and surface doped ions（Se^2-, Cu^2＋, and Hg^2＋） on the photoluminescence of Cd^2＋-rich CdS QDs was investigated. A quantitative model was proposed to understand the complex transfer processes of excited electrons in CdS QDs. The transfer of excited electrons from either the conduction band or the Cd^2＋-related trap-state to the surface S^2-related shallow hole trap-state is effective. However, the trap of excited electrons by surface doped ion trap-states from the Cd^2＋-related trap-state is more effective than that from the conduction band. The efficiency of trapping electrons from both the conduction band and the Cd^2＋-related trap-state can be quantitatively understood with the help of the proposed model. The results show that the transfer efficiency of excited electrons is dependent on the location of the energy-level of the relevant surface-related trap-state. The trap of excited electrons by the surface trap-state with energy-level closer to that of the conduction band is more effective, especially for the trap of excited electrons from Cd^2＋-related trap-state.