Characteristics of Amorphous Silicon Nitride Films Deposited by LF-PECVD from SiH_4/N_2

作     者：ZHONG Zhi-qin ZHANG Yi YU Zhi-wei DAI Li-ping ZHANG Guo-jun WANG Yu-mei WANG Gang WANG Shu-ya 

作者机构：State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 CHN 

出 版 物：《Semiconductor Photonics and Technology》 (半导体光子学与技术（英文版）)

年 卷 期：2009年第15卷第3期

页      面：145-148页

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

主　　题：SiNx SE AFM XPS PECVD 

摘      要：Amorphous silicon nitride films were deposited by low-frequency plasma-enhanced chemical vapor deposition（LF-PECVD） using silane and nitrogen as precursors. Characteristics such as deposition rate, surface morphology, and chemical composition were measured by spectroscopic ellipsometry（SE）, atomic force mieroscope（AFM） and x-ray photoelectron spectroscopy（XPS）. It was shown that amorphous silicon nitride film could be prepared by LF-PECVD with good uniformity and even surface. The XPS result indicated that a small quantity of oxygen was involved in the sample, which was discussed in this paper.