Design and fabrication of sub-μs silicon-on-insulator thermo-optic 4×4 switch matrix
Design and fabrication of sub-μs silicon-on-insulator thermo-optic 4×4 switch matrix作者机构:StateKeyLaboratoryofIntegratedOptoelectronicsInstituteofSemiconductorChineseAcademyofSciencesBeijing100083China
出 版 物:《Optoelectronics Letters》 (光电子快报(英文版))
年 卷 期:2007年第3卷第4期
页 面:241-242页
学科分类:080903[工学-微电子学与固体电子学] 0808[工学-电气工程] 0809[工学-电子科学与技术(可授工学、理学学位)] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 080502[工学-材料学] 0702[理学-物理学]
基 金:Supported in part by the National Key Basic Research Special Foundation of China under Grant No. G2000-03-66 the Na-tional High Technology Program of China under Grant No.2002AA312060 the National Natural Science Foundation ofChina under Grant No. 60336010
摘 要:A rearrangeable nonblocking silicon-on-insulator-based thermo-optic 4x4 switch matrix with spot size converters (SSCs) and a new driving circuit are designed and fabricated. The introduction of a spot size converter (SSC) has decreased the insertion loss to less than 10dB and the new driving circuit has improved the response speed to less than l^s.