Solute atom segregation to I1 stacking fault and its bounding partial dislocations in a Mg–Bi alloy

作     者：Cong He Yong Zhang Zhiqiao Li Houwen Chen Jian-Feng Nie Cong He;Yong Zhang;Zhiqiao Li;Houwen Chen;Jian-Feng Nie

作者机构：International Joint Laboratory for Light Alloys(Ministry of Education)College of Materials Science and EngineeringChongqing UniversityChongqing 400044PR China Research Center for Magnetic and Spintronic MaterialsNational Institute for Materials ScienceTsukuba 305-0047Japan Department of Materials Science and EngineeringMonash UniversityVictoria 3800Australia State Key Laboratory of Advanced Design and Manufacturing for Vehicle BodyHunan UniversityChangsha 410082PR China 

出 版 物：《Journal of Magnesium and Alloys》 (镁合金学报（英文）)

年 卷 期：2024年第12卷第8期

页      面：3135-3141页

核心收录：

学科分类：08[工学] 080502[工学-材料学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：support by the National Natural Science Foundation of China(52071033) Open Foundation of State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body(32115016) 

主　　题：Mg alloys Suzuki segregation Stacking fault Frank partial dislocation 

摘      要：Stacking faults(SFs)and the interaction between solute atoms and SFs in a Mg–Bi alloy are investigated using aberration-corrected scanning transmission electron *** is found that abundant I_(1)SFs are generated after cold rolling and are mainly distributed inside{1012}*** aging treatment,the formation of single-layer and three-layer Bi atom segregation in the vicinity of I_(1)fault are clearly *** segregation also occurs at the 1/6bounding Frank partial dislocation *** segregation behaviors in I_(1)fault and Frank dislocations are discussed and rationalized using first-principles calculations.