Positive MR and Large Temperature—Field Sensitivity in Manganite Based Heterostructures

作     者：Uma Khachar P.S.Solanki R.J.Choudhary D.M.Phase D.G.Kuberkar 

作者机构：Department of PhysicsSaurashtra University UGCe-DAE Consortium for Scientifc Research 

出 版 物：《Journal of Materials Science & Technology》 (材料科学技术（英文版）)

年 卷 期：2013年第29卷第10期

页      面：989-994页

核心收录：

学科分类：080801[工学-电机与电器] 0808[工学-电气工程] 0817[工学-化学工程与技术] 0806[工学-冶金工程] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0703[理学-化学] 0802[工学-机械工程] 0801[工学-力学（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：UGC-DAE,CSR Indore Project (CSR-I/CSR_Indore/PROJ/SANC/36/2008/927) DST for the award of Fast Track Young Scientist (No.SR/FTP/PS-138/2010) 

主　　题：Interfaces Thin films Pulsed laser deposition X-ray diffraction Electric properties 

摘      要：Studies on the ZnO/La0.5Pr0.2Sr0.3Mn03 （LPSMO）/SrNb0.002Ti0.99803 （SNTO） heterostructure having varying thickness of p-type LPSMO （100 nm - LP1） and （200 nm - LP2） manganite are carried out. ZnO/LPSMO （n-p） and LPSMO/SNTO （p-n） junctions of both the heterostructures exhibit good rectifying behavior in a wide range of temperature and applied field. Forward and reverse bias characteristics of both the junctions of heterostructures show opposite behavior. The observation of negative magnetoresistance （MR） at 5 K and positive MR at 300 K, in both the heterostructures, has been explained in the context of interface region effects and filling of energy bands of LPSMO manganite. Further, at high temperature, the heterostructures exhibit large temperature （46%K-1） and field （40%T-1） sensitivities. Dependence of transport, magnetotransport, I-V and sensing properties of the heterostructures, on the temperature, field and film thicknesses have been discussed in this communication.