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The influence of ion-doped on properties of Bi system piezoelectric ceramics

The influence of ion-doped on properties of Bi system piezoelectric ceramics

作     者:ZHU Jian-guo (College of Material Science and Engineering,Sichuan University,Chengdu 610064,China) 

出 版 物:《功能材料信息》 (Functional Materials Information)

年 卷 期:2007年第4卷第5期

页      面:15-16页

学科分类:080801[工学-电机与电器] 0808[工学-电气工程] 08[工学] 0805[工学-材料科学与工程(可授工学、理学学位)] 080502[工学-材料学] 

主  题:Bi-piezoelectric ceramics manganese doping Bimodification 

摘      要:Piezoelectric ceramics based on Pb(Zr_xTi_(1-x))O_3(PZT)are widely used in electronic and microelectronic *** commercially available PZT formulations have Curie temperature T_C~300℃which limits the operating temperatures to~150℃.However,a number of piezoelectric applications require operating at higher temperatures than are currently available with conventional PZT *** et *** a perovskite tolerance factor relationship with T_C to predict that Bi(Me)O_3-PbTiO_3 systems(Me:Sc,In,Y,Y...

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