Enhancing lead-free photovoltaic performance:Minimizing buried surface voids in tin perovskite films through weakly polar solvent pre-treatment strategy

作     者：Dongdong Yan Han Zhang Chensi Gong Hailong Wang Qing Lu Jun Liu Wenzhen Lv Mingguang Li Runfeng Chen Ligang Xu 

作者机构：Key Laboratory for Organic Electronics and Information Displays(KLOEID)&Jiangsu Key Laboratory for BiosensorsInstitute of Advanced Materials(IAM)Jiangsu National Synergetic Innovation Center for Advanced Materials(SICAM)Nanjing University of Posts&TelecommunicationsNanjing 210023JiangsuChina National Institute of MetrologyBeijing 100029China School of PharmacyNorth Sichuan Medical CollegeNanchong 637100SichuanChina School of Optoelectronic Science and Engineering&Collaborative Innovation Center of Suzhou Nano Science and TechnologyKey Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province&Key Lab of Modern Optical Technologies of Education Ministry of ChinaSoochow UniversitySuzhou 215031JiangsuChina 

出 版 物：《Journal of Energy Chemistry》 (能源化学（英文版）)

年 卷 期：2024年第98卷第11期

页      面：556-561页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 080502[工学-材料学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：National Natural Science Foundation of China (62274094, 62175117) Natural Science Foundation of Jiangsu Higher Education Institutions (22KJB510011) Key Lab of Modern Optical Technologies of Education Ministry of China, Soochow University (KJS2260) Huali Talents Program of Nanjing University of Posts and Telecommunications 

主　　题：Tin perovskite Buried interfacial Weakly polar solvent pre-treatment strategy 

摘      要：Buried interfacial voids have always been a notorious phenomenon observed in the fabrication of lead perovskite films. The existence of interfacial voids at the buried interface will capture the carrier, suppress carrier transport efficiencies, and affect the stability of photovoltaic devices. However, the impact of these buried interfacial voids on tin perovskites, a promising avenue for advancing lead-free photovoltaics, has been largely overlooked. Here, we utilize an innovative weakly polar solvent pretreatment strategy(WPSPS) to mitigate buried interfacial voids of tin perovskites. Our investigation reveals the presence of numerous voids in tin perovskites during annealing, attributed to trapped dimethyl sulfoxide(DMSO) used in film formation. The WPSPS method facilitates accelerated DMSO evaporation, effectively reducing residual DMSO. Interestingly, the WPSPS shifts the energy level of PEDOT:PSS downward, making it more aligned with the perovskite. This alignment enhances the efficiency of charge carrier transport. As the result, tin perovskite film quality is significantly improved,achieving a maximum power conversion efficiency approaching 12% with only an 8.3% efficiency loss after 1700 h of stability tests, which compares well with the state-of-the-art stability of tin-based perovskite solar cells.