Effect of the back surface topography on the efficiency in silicon solar cells

作     者：郭爱娟 叶发敏 郭里辉 纪冬 冯仕猛 

作者机构：Solar Energy Institute Department of Physics Shanghai Jiaotong University Shanghai Topsolar Green Energy Co. Ltd 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2009年第30卷第7期

页      面：48-50页

核心收录：

学科分类：08[工学] 080502[工学-材料学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

主　　题：planar back surface aluminum-silicon contact back surface field 

摘      要：Different processes are used on the back surface of silicon wafers to form cells falling into three groups：textured, planar, and sawed-off pyramid back *** characteristic parameters of the cells, ISC, VOC, FF, Pm, and Eff, are *** these parameters of the planar back surface cells are the *** FF, Pm, and Eff of sawed-off pyramid back surface cells are superior to textured back surface cells, although ISC and VOC are *** parasitic resistance is analyzed to explain the higher FF of the sawed-off pyramid back surface *** cross-section scanning electron microscopy（SEM） pictures show the uniformity of the aluminum-silicon alloy, which has an important effect on the back surface recombination velocity and the ohmic *** measured value of the aluminum back surface field thickness in the SEM picture is in good agreement with the theoretical value deduced from the Al-Si phase *** is shown in an external quantum efficiency（EQE） diagram that the planar back surface has the best response to a wavelength between 440 and 1000 nm and the sawed-off back surface has a better long wavelength response.