Growth of Free-Standing AlN Nanocrystals on Nanorod ZnO Template

作     者：胡卫国 魏鸿源 焦春美 康亭亭 张日清 刘祥林 Hu Weiguo;Wei Hongyuan;Jiao Chunmei;Kang Tingting;Zhang Riqing;Liu Xianglin

作者机构：中国科学院半导体研究所北京100083 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2007年第28卷第10期

页      面：1508-1512页

核心收录：

学科分类：08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：国家自然科学基金资助项目(批准号:60506002)~~ 

主　　题：metalorganic vapor phase epitaxy nanomaterials nitride 

摘      要：AlN film is deposited on a nanorod ZnO template by metalorganic chemical vapor deposition. Scanning electron microscopy measurements reveal that this film forms a lying nanorod surface. The grazing incidence X- ray diffraction further proves that it is entirely a wurtzite AIN structure, and the average size of the crystallite grains is about 12nm,which is near the ZnO nanorod diameter （30nm）. This means that the nanorod ZnO template can restrict the AlN lateral overgrowth. Additionally, by etching the ZnO template with H2 at high temperatures,we directly achieve epitaxial lift-off during the growth process. Eventually, free-standing AlN nanocrystals are achieved,and the undamaged area is near 1cm × 1cm. We define the growth mechanism as a ＂grow-etch- merge＂ process.