Recombination Efficiency in Double-Layer Organic Light-Emitting Devices

作     者：许雪梅 彭景翠 翟述 李宏建 吴建好 欧阳玉 

作者机构：DepartmentofAppliedPhysicsHunanUniversityChangsha410082//SchoolofPhysicsScienceandTechnologyCentralSouthUniversityChangsha410083 DepartmentofAppliedPhysicsHunanUniversityChangsha410082 SchoolofP-hysicsScience-andTechnologyCentralSouthUniversityChangsha410083 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2005年第22卷第3期

页      面：719-722页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学] 

基　　金：国家教育部高等学校博士学科点专项科研基金 湖南省杰出青年科学基金 中国博士后科学基金 

主　　题：Recombination Efficiency Double-Layer Organic Light-Emitting Devices 

摘      要：We analyse the influence of properties of organic/organic interface (OOI) on the characteristics of recombination efficiency of organic double-layer light-emitting diodes. Based on the disordered hopping theory model, spatial and energetic disorder of hopping states are also discussed for the case of space charge limited currents in hole transmitting layers but injection-limited currents in electron transporting layers. The results show that the recombination efficiency increases firstly and then decreases for different OOI parameters, and there is a maximum value changed with different spatial disorder parameters and energetic disorder scale. Different spatial disorder parameters make carrier mobilities change greatly, and the energetic disorder scale causes various localized state densities. Our calculated results are qualitatively in agreement with the experimental data.