Inhomogeneous barrier height effect on the current–voltage characteristics of an Au/n-InP Schottky diode

作     者：Kamal Zeghdar Lakhdar Dehimi Achour Saadoune Nouredine Sengouga 

作者机构：Laboratory of Metallic and Semi-conducting Materials (LMSM) Université de Biskra Faculty of Science Université de Batna 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2015年第36卷第12期

页      面：81-86页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0703[理学-化学] 0702[理学-物理学] 

主　　题：simulation SDB Silvaco InP temperature I-V-T 

摘      要：We report the current-voltage （I-V） characteristics of the Schottky diode （Au/n-InP） as a function of temperature. The SILVACO-TCAD numerical simulator is used to calculate the I-V characteristic in the tem- perature range of 280-400 K. This is to study the effect of temperature on the I-V curves and assess the main parameters that characterize the Schottky diode such as the ideality factor, the height of the barrier and the series resistance. The I-V characteristics are analyzed on the basis of standard thermionic emission （TE） theory and the inhomogeneous barrier heights （BHs） assuming a Gaussian distribution. It is shown that the ideality factor de- creases while the barrier height increases with increasing temperature, on the basis of TE theory. Furthermore, the homogeneous BH value of approximately 0.524 eV for the device has been obtained from the linear relationship between the temperature-dependent experimentally effective BHs and ideality factors. The modified Richardson plot, according to the inhomogeneity of the BHs, has a good linearity over the temperature range. The evaluated Richardson constant A^＊ was 10.32 A·cm^-2·K^-2, which is close to the theoretical value of 9.4 A·cm^-2·K^-2 for nInP. The temperature dependence of the I-V characteristics of the Au/n-InP Schottky diode have been successfully explained on the basis of the thermionic emission （TE） mechanism with a Gaussian distribution of the Schottky barrier heights （SBHs）. Simulated I-V characteristics are in good agreement with the measurements [Korucu D, Mammadov T S. J Optoelectronics Advanced Materials, 2012, 14：41 ]. The barrier height obtained using Gaussian Schottky barrier distribution is 0.52 eV, which is about half the band gap of InP.