A grating-coupled external cavity InAs/InP quantum dot laser with 85-nm tuning range
A grating-coupled external cavity InAs/InP quantum dot laser with 85-nm tuning range作者机构:Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-dimensional Semiconductor Materials and DevicesInstitute of SemiconductorsChinese Academy of Sciences
出 版 物:《Chinese Physics B》 (中国物理B(英文版))
年 卷 期:2013年第22卷第9期
页 面:446-449页
核心收录:
学科分类:080901[工学-物理电子学] 0809[工学-电子科学与技术(可授工学、理学学位)] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 0803[工学-光学工程]
基 金:supported by the National Natural Science Foundation of China (Grant Nos. 61274072 60976057 61176047 and 60876086)
主 题:quantum dot external cavity tunable laser
摘 要:The optical performance of a grating-coupled external Continuous tuning from 1391 nm to 1468 nm is realized at cavity laser based on InAs/InP quantum dots is investigated. an injection current of 1900 mA. With the injection current increasing to 2300 mA, the tuning is blue shifted to some extent to the range from 1383 nm to 1461 nm. By combining the effect of the injection current with the grating tuning, the total tuning bandwidth of the external cavity quantum-dot laser can reach up to 85 nm. The dependence of the threshold current on the tuning wavelength is also presented.