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Helium-Implantation-Induced Damage in NHS Steel Investigated by Slow-Positron Annihilation Spectroscopy

Helium-Implantation-Induced Damage in NHS Steel Investigated by Slow-Positron Annihilation Spectroscopy

作     者:LI Yuan-Fei SHEN Tie-Long GAO Xing GAO Ning YAO Cun-Feng SUN Jian-Rong WEI Kong-Fang LI Bing-Sheng ZHANG Peng CAO Xing-Zhong ZHU Ya-Bin PANG Li-Long CUI Ming-Huan CHANG Hai-Long WANG Ji ZHU Hui-Ping WANG Dong SONG Peng SHENG Yan-Bin ZHANG Hong-Peng HU Bi-Tao WANG Zhi-Guang 

作者机构:Institute of Modern Physics Chinese Academy of Sciences Lanzhou 730000 University of Chinese Academy of Sciences Beijing 100049 School of Nuclear Science and Technology Lanzhou University Lanzhou 730000 Institute of High Energy Physics Chinese Academy of Sciences Beijing 100049 

出 版 物:《Chinese Physics Letters》 (中国物理快报(英文版))

年 卷 期:2014年第31卷第3期

页      面:111-114页

核心收录:

学科分类:080903[工学-微电子学与固体电子学] 081702[工学-化学工艺] 0809[工学-电子科学与技术(可授工学、理学学位)] 08[工学] 0817[工学-化学工程与技术] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 080502[工学-材料学] 

基  金:Supported by the National Basic Research Program of China under Grant No 2010CB832902  and the National Natural Science Foundation of China under Grant Nos 91026002  91126011 and 11275005 

主  题:HELIUM RESEARCH POSITRON beams THERMAL conductivity STEEL -- Research PHYSICS research 

摘      要:Evolutions of defects and helium contained defects produced by atomic displacement and helium deposition with helium implantation at different temperatures in novel high silicon (NHS) steel are investigated by a slow positron beam. Differences of the defect information among samples implanted by helium to a fluence of 1×1017 ions/cm2 at room temperature, 300°C, 450°C and 750°C are discussed. It is found that the mobility of vacancies and vacancy clusters, a recombination of vacancy-type defects and the formation of the He-V complex lead to the occurrence of these differences. At high temperature irradiations, a change of the diffusion mechanism of He atoms/He bubbles might be one of the reasons for the change of the S-parameter.

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