Tailoring-compensated ferrimagnetic state and anomalous Hall effect in quaternary Mn–Ru–V–Ga Heusler compounds
作者机构:Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing 100190China University of Chinese Academy of SciencesBeijing 100049China Tiangong UniversityTianjin 300387China
出 版 物:《Chinese Physics B》 (中国物理B(英文版))
年 卷 期:2024年第33卷第7期
页 面:595-603页
核心收录:
学科分类:080603[工学-有色金属冶金] 0808[工学-电气工程] 0809[工学-电子科学与技术(可授工学、理学学位)] 07[理学] 0806[工学-冶金工程] 070205[理学-凝聚态物理] 0702[理学-物理学]
基 金:Project supported by the National Key Research and Development Program of China(Grant No.2022YFA1402600) the National Natural Science Foundation of China(Grant No.12274438) the Beijing Natural Science Foundation,China(Grant No.Z230006)
主 题:compensated ferrimagnet anomalous Hall effect residual resistivity ratio
摘 要:Cubic Mn_(2)Ru_(x)Ga Heusler compound is a typical example of compensated ferrimagnet with attractive potential for high-density,ultrafast,and low-power spintronic *** the form of epitaxial thin films,Mn_(2)Ru_(x)Ga exhibits high spin polarization and high tunability of compensation temperature by freely changing the Ru content x in a broad range(0.3x1.0).Herein Mn-Ru-Ga-based polycrystalline bulk buttons prepared by arc melting are systematically studied and it is found that in equilibrium bulk form,the cubic structure is unstable when x*** overcome this limitation,Mn-Ru-Ga is alloyed with a fourth element *** adjusting the content of V in the By adjusting the content of V in the Mn_(2)Ru_(0.75)V_(y)Ga and Mn_(2.25-y)Ru_(0.75)V_(y)Ga quaternary systems the magnetic compensation temperature is *** is achieved near 300 K which is confirmed by both the magnetic measurement and anomalous Hall effect *** analyses of the anomalous Hall effect scaling in quaternary Mn-Ru-V-Ga alloy reveal the dominant role of skew scattering,notably that contributed caused by the thermally excited phonons,in contrast to the dominant intrinsic mechanism found in many other 3d ferromagnets and Heusler *** is further shown that the Ga antisites and V content can simultaneously control the residual resistivity ratio(RRR)as well as the relative contribution of phonon and defect to the anomalous Hall effect a/a0 in Mn-Ru-V-Ga,resulting in a scaling relation a/a0 ∝RRR^(1.8).