Enhanced piezoelectric performance of Cr/Ta non-equivalent co-doped Bi_(4)Ti_(3)O_(12)-based high-temperature piezoceramics

作     者：Xuanyu Chen Ziqi Ma Bin Li Yejing Dai 

作者机构：School of MaterialsSun Yat-sen UniversityShenzhen 518107China 

出 版 物：《Journal of Advanced Ceramics》 (先进陶瓷（英文）)

年 卷 期：2024年第13卷第3期

页      面：263-271页

核心收录：

学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：This work is financially supported by the National Natural Science Foundation of China(No.52172135) the Youth Top Talent Project of the National Special Support Program(No.2021-527-07) the Leading Talent Project of the National Special Support Program(No.2022WRLJ003) the Guangdong Basic and Applied Basic Research Foundation for Distinguished Young Scholars(Nos.2022B1515020070 and 2021B1515020083) 

主　　题：high temperature piezoelectricity co-doped Bi_(4)Ti_(3)O_(12)(BIT) 

摘      要：In this study,(Cr_(1/3)/Ta_(2/3))non-equivalent co-doped Bi_(4)Ti_(3)O_(12)(BIT)ceramics were prepared to solve the problem that high piezoelectric performance,high Curie temperature,and high-temperature resistivity could not be achieved simultaneously in BIT-based ceramics.A series of Bi_(4)Ti_(3-x)(Cr_(1/3)Ta_(2/3))_(x)O_(12)(x=0-0.04)ceramics were synthesized by the solid-state reaction *** phase structure,microstructure,piezoelectric performance,and conductive mechanism of the samples were systematically *** B-site non-equivalent co-doping strategy combining high-valence Ta^(5+)and low-valence Cr^(3+)significantly enhances electrical properties due to a decrease in oxygen vacancy ***_(4)Ti_(2.97)(Cr_(1/3)Ta_(2/3))_(0.03)O_(12)ceramics exhibit a high piezoelectric coefficient(d_(33)=26 pC·N^(-1))and a high Curie temperature(TC=687℃).Moreover,the significantly increased resistivity(ρ=2.8×10^(6)Ω·cm at 500℃)and good piezoelectric stability up to 600℃are also obtained for this *** the results demonstrate that Cr/Ta co-doped BIT-based ceramics have great potential to be applied in high-temperature piezoelectric applications.