On-chip integrated few-mode erbium–ytterbium co-doped waveguide amplifiers
作者机构:Aerospace Laser Technology and Systems DepartmentShanghai Institute of Optics and Fine MechanicsChinese Academy of SciencesShanghai 201800China Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing 100049China School of Physical SciencesUniversity of Science and Technology of ChinaHefei 230026China School of MicroelectronicsShanghai UniversityShanghai 201800China State Key Laboratory of Advanced Optical Communications Systems and NetworksSchool of ElectronicsPeking UniversityBeijing 100871China
出 版 物:《Photonics Research》 (光子学研究(英文版))
年 卷 期:2024年第12卷第5期
页 面:1067-1077页
核心收录:
学科分类:080902[工学-电路与系统] 0809[工学-电子科学与技术(可授工学、理学学位)] 08[工学]
基 金:Key Program of the National Natural Science Foundation of China(62035001) Shanghai Science and Technology Innovation Action Plan(22dz208700) International Partnership Program of Chinese Academy of Sciences(18123KYSB20210013)
摘 要:We propose for the first time,to the best of our knowledge,an on-chip integrated few-mode erbium–ytterbium co-doped waveguide amplifier based on an 800 nm thick Si_(3)N_(4)platform,which demonstrates high amplification gains and low differential modal gains(DMGs)*** eccentric waveguide structure and a co-propagating pumping scheme are adopted to balance the gain of each mode.A hybrid mode/polarization/wavelengthdivision(de)multiplexer with low insertion loss and crosstalk is used for multiplexing and demultiplexing in two operation wavebands centered at 1550 nm and 980 nm,where the light in these two bands serves as the signal light and pump light of the amplifier,*** results demonstrate that with an input signal power of 0.1 mW,TE_(0)mode pump power of 300 mW,and TE_(1)mode pump power of 500 m W,the three signal modes(TE_(0)∕TM_(0)∕TE_(1))all exhibit amplification gains exceeding 30 dB,while maintaining a DMG of less than 0.1 dB.