Surface heterojunction based on n-type low-dimensional perovskite film for highly efficient perovskite tandem solar cells

作     者：Xianyuan Jiang Qilin Zhou Yue Lu Hao Liang Wenzhuo Li Qi Wei Mengling Pan Xin Wen Xingzhi Wang Wei Zhou Danni Yu Hao Wang Ni Yin Hao Chen Hansheng Li Ting Pan Mingyu Ma Gaoqi Liu Wenjia Zhou Zhenhuang Su Qi Chen Fengjia Fan Fan Zheng Xingyu Gao Qingqing Ji Zhijun Ning Xianyuan Jiang;Qilin Zhou;Yue Lu;Hao Liang;Wenzhuo Li;Qi Wei;Mengling Pan;Xin Wen;Xingzhi Wang;Wei Zhou;Danni Yu;Hao Wang;Ni Yin;Hao Chen;Hansheng Li;Ting Pan;Mingyu Ma;Gaoqi Liu;Wenjia Zhou;Zhenhuang Su;Qi Chen;Fengjia Fan;Fan Zheng;Xingyu Gao;Qingqing Ji;Zhijun Ning

作者机构：School of Physical Science and TechnologyShanghai Tech University Department of Modern PhysicsUniversity of Science and Technology of China i-Lab CAS Key Laboratory of Nanophotonic Materials and Devices Suzhou Institute of Nano-Tech and Nano-Bionics Shanghai Synchrotron Radiation Facility (SSRF)Shanghai Advanced Research InstituteChinese Academy of Sciences 

出 版 物：《National Science Review》 (国家科学评论(英文版))

年 卷 期：2024年第11卷第5期

页      面：244-253页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 080502[工学-材料学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：supported by the National Natural Science Foundation of China (61935016, 92056119, 22175118 and 22372193) the National Key Research and Development Program of China(2021YFA0715502) the Double First-Class Initiative Fund of Shanghai Tech University,the Shanghai Key Research Program(20XD1402500 and 20JC1415800) the Science and Technology Commission of Shanghai Municipality (21ZR1442100) partially supported by the Centre for High-Resolution Electron Microscopy (ChEM),School of Physical Science and Technology (SPST),Shanghai Tech University under contract no.EM02161943 the Analytical Instrumentation Center,SPST,Shanghai Tech University under contract no. SPST-AIC10112914 

主　　题：perovskite solar cells field effect transistors heterojunction 

摘      要：Enhancing the quality of junctions is crucial for optimizing carrier extraction and suppressing recombination in semiconductor devices. In recent years, metal halide perovskite has emerged as the most promising next-generation material for optoelectronic devices. However, the construction of high-quality perovskite junctions, as well as characterization and understanding of their carrier polarity and density,remains a challenge. In this study, using combined electrical and spectroscopic characterization techniques,we investigate the doping characteristics of perovskite films by remote molecules, which is corroborated by our theoretical simulations indicating Schottky defects consisting of double ions as effective charge *** a post-treatment process involving a combination of biammonium and monoammonium molecules, we create a surface layer of n-type low-dimensional perovskite. This surface layer forms a heterojunction with the underlying 3D perovskite film, resulting in a favorable doping profile that enhances carrier extraction. The fabricated device exhibits an outstanding open-circuit voltage(VOC) up to 1.34 V and achieves a certified efficiency of 19.31% for single-junction wide-bandgap（1.77 eV） perovskite solar cells, together with significantly enhanced operational stability, thanks to the improved separation of carriers. Furthermore, we demonstrate the potential of this wide-bandgap device by achieving a certified efficiency of 27.04% and a VOCof 2.12 V in a perovskite/perovskite tandem solar cell configuration.