Electric-double-layer-gated 2D transistors for bioinspired sensors and neuromorphic devices

作     者：Xiangde Lin Yonghai Li Yanqiang Lei Qijun Sun 

作者机构：Department of ResearchZhoupu Hospital Affliated to Shanghai University of Medicine&Health SciencesShanghaiChina Beijing Institute of Nanoenergy and NanosystemsChinese Academy of SciencesBeijingChina Center on Nanoenergy ResearchSchool of Chemistry and Chemical EngineeringGuangxi UniversityNanningChina 

出 版 物：《International Journal of Smart and Nano Materials》 (国际智能和纳米材料杂志（英文）)

年 卷 期：2024年第15卷第1期

页      面：238-259页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：supported by the National Key Research and Development Program of China(2021YFB3200304) the National Natural Science Foundation of China(52073031),Beijing Nova Program(Z211100002121148) Fundamental Research Funds for the Central Universities(EOEG6801X2) the"Hundred Talents Program"of the Chinese Academy of Sciences 

主　　题：Electrical double layer ,transistors 2D materials sensors applications 

摘      要：Electric double layer(EDL)gating is a technique in which ions in an electrolyte modulate the charge transport in an electronic material through electrical field effects.A sub-nanogap capacitor is induced at the interface of electrolyte/semiconductor under the external electrical field and the capacitor has an ultrahigh capacitance density(~μF cm-2).Recently,EDL gating technique,as an interfacial gating,is widely used in two-dimensional(2D)crystals for various sophisti-cated materials characterization and device *** review introduces the EDL-gated transistors based on 2D materials and their applications in the field of bioinspired optoelectronic detection,sen-sing,logic circuits,and neuromorphic computation.