Transmittance contrast-induced photocurrent:A general strategy for self-powered photodetectors based on MXene electrodes

作     者：Hailong Ma Huajing Fang Jiaqi Li Ziqing Li Xiaosheng Fang Hong Wang 

作者机构：Center for Advancing Materials Performance from the Nanoscale(CAMP-Nano)State Key Laboratory for Mechanical Behavior of MaterialsXi'an Jiaotong UniversityXi'anthe People's Republic of China Department of Materials ScienceInstitute of OptoelectronicsFudan UniversityShanghaithe People's Republic of China Department of Materials Science and Engineering&Shenzhen Engineering Research Center for Novel Electronic Information Materials and DevicesSouthern University of Science and TechnologyShenzhenthe People's Republic of China 

出 版 物：《InfoMat》 (信息材料（英文）)

年 卷 期：2024年第6卷第5期

页      面：47-57页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：supported by the National Natural Science Foundation of China(No.51902250) H.F.would like to thank the support from the Guangdong Provincial Key Laboratory Program(Grant No.2021B1212040001) Hong Wang acknowledges support from the Shenzhen Science and Technology Program(No.KQTD20180411143514543) Shenzhen DRC project1433 

主　　题：GaN MXene Schottky junction self-powered photodetector transmittance contrast 

摘      要：The regulation of carrier generation and transport by Schottky junctions enables effective optoelectronic conversion in optoelectronic devices.A simple and general strategy to spontaneously generate photocurrent is of great signifi-cance for self-powered photodetectors but is still being ***,we pro-pose that a photocurrent can be induced at zero bias by the transmittance contrast of MXene electrodes in MXene/semiconductor Schottky *** MXene electrodes with a large transmittance contrast(84%)between the thin and thick zones were deposited on the surface of a semiconductor wafer using a simple and robust solution *** probe force microscopy tests indicated that the photocurrent at zero bias could be attributed to asymmetric carrier generation and transport between the two Schottky junctions under *** a demonstration,the MXene/GaN ultraviolet(UV)photo-detector exhibits excellent performance superior to its counterpart without transmittance contrast,including high responsivity(81 mA W–1),fast response speed(less than 31 and 29 ms)and ultrahigh on/off ratio(1.33�106),and good UV imaging ***,this strategy has proven to be uni-versal for first-to third-generation semiconductors such as Si and *** results provide a facile and cost-effective route for high-performance self-powered photodetectors and demonstrate the versatile and promising applica-tions of MXene electrodes in optoelectronics.