Fabrication of sub-20 nm MoS_(2) horizontal nanowire on silicon substrates by inclusion of precursors into polystyrene-bpolyethylene oxide nanopatterns: Detailed structural investigation

作     者：Tandra Ghoshal Michael A.Morris 

作者机构：School of ChemistryAMBER and CRANNTrinity College DublinDublinIrelandD02 AK60 

出 版 物：《Nano Research》 (纳米研究（英文版）)

年 卷 期：2024年第17卷第3期

页      面：2145-2153页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0702[理学-物理学] 

基　　金：support from the Science Foundation Ireland AMBER grant 12/RC/2278. 

主　　题：MoS_(2) block copolymer nanowires inclusion X-ray photoelectron spectroscopy(XPS) mapping photoluminescence 

摘      要：Herein,we demonstrate the fabrication of sub-20 nm MoS_(2) horizontal nanowire arrays on silicon substrates using a self-assembled block copolymer assisted in situ inclusion approach.Microphase separated long-range ordered polystyrene-b-polyethylene oxide(PS-b-PEO)block copolymer(BCP)line-space nanopatterns were achieved through thermo-solvent annealing.The patterns produced had long-range order and domain sizes1μm.The BCP structures were lightly etched and modified by anhydrous ethanol to facilitate insertion of molybdenum precursor within the film maintaining the parent BCP arrangements.Horizontal ordered molybdenum oxide nanowire arrays were then fabricated by ultraviolet(UV)/ozone treatment at room temperature.The oxides were converted to sulphides by thermal evaporation at different temperatures in Ar/H_(2) environment.X-ray photoelectron spectroscopy revealed the composition and phases of the molybdenum oxide and sulphide nanowires.Elemental mapping was performed to investigate the interfaces between the oxide and sulphide nanowires with the substrate surface.The formation and stability of the sulphide nanowires were studied at different temperatures.The photoluminescence and Raman properties were studied at different formation temperatures to investigate defects and estimate the number of layers.