Impact of parameter fluctuations on RF stability performance of DG tunnel FET

作     者：K Sivasankaran P S Mallick 

作者机构：School of Electronics Engineering VIT University School of Electrical Engineering VIT University 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2015年第36卷第8期

页      面：78-82页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

主　　题：DG tunnel FET radio frequency stability factor numerical simulation 

摘      要：This paper presents the impact of parameter fluctuation due to process variation on radio frequency （RF） stability performance of double gate tunnel FET （DG TFET）. The influence of parameter fluctuation due to process variation leads to DG TFET performance degradation. The RF figures of merit （FoM） such as cut-off frequency （ft）, maximum oscillation frequency （fmax） along with stability factor for different silicon body thickness, gate oxide thickness and gate contact alignment are obtained from extracted device parameters through numerical simulation. The impact of parameter fluctuation of silicon body thickness, gate oxide thickness and gate contact alignment was found significant and the result provides design guidelines ofDG TFET for RF applications.