Electrical transport and photoresponse properties of single-crystalline p-type Cd_3As_2 nanowires

作     者：DUAN TingYuan LOU Zheng SHEN GuoZhen 

作者机构：Wuhan National Laboratory for Optoelectronics Huazhong University of Science and Technology State Key Laboratory for Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences 

出 版 物：《Science China(Physics,Mechanics & Astronomy)》 (中国科学：物理学、力学、天文学（英文版）)

年 卷 期：2015年第58卷第2期

页      面：95-100页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：supported by the National Natural Science Foundation of China(Grant Nos.61377033 and 91123008) 

主　　题：nanowires electrical transport photodetector 

摘      要：Cd3As2 is an important II-V group semiconductor with excellent electrical and optoelectronic properties. In this work, we report the large scale growth of single-crystalline Cd3As2 nanowires via a simple chemical vapor deposition method. Single nanowire field-effect transistors were fabricated with the as-grown Cd3As2 nanowires, which exhibited a high lon/loff of 104 with a hole mobility of 6.02 cm2V-1s-1. Photoresponse properties of the Cd3As2 nanowires were also investigated by illuminating the nanowires with white light by varying intensities. Besides, flexible photodetectors were also fabricated on flexible PET substrate, showing excellent mechanical stablility and flexible electro-optical properties under various bending states and bending cycles. Our results indicate that Cd3As2 nanowires can be the basic material of next generation electronic and ootoelectronic devices.