Development of a simple two-step lithography fabrication process for resonant tunneling diode using air-bridge technology

作     者：Swagata Samanta Jue Wang Edward Wasige Swagata Samanta;Jue Wang;Edward Wasige

作者机构：Department of Electronics and Communication EngineeringSRM University-APAndhra PradeshIndia 2School of EngineeringUniversity of GlasgowGlasgow G128LTUK 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2023年第44卷第11期

页      面：79-82页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学] 

基　　金：funded by Horizon 2020 Future and Emerging Technologies ChipAI project under the grant agreement 828841 

主　　题：air-bridge indium phosphide microfabrication resonant tunneling diode 

摘      要：This article reports on the development of a simple two-step lithography process for double barrier quantum well(DBQW)InGaAs/AlAs resonant tunneling diode(RTD)on a semi-insulating indium phosphide(InP)substrate using an air-bridge *** approach minimizes processing steps,and therefore the processing time as well as the required *** is particularly suited for material qualification of new epitaxial layer designs.A DC performance comparison between the proposed process and the conventional process shows approximately the same *** expect that this novel technique will aid in the recent and continuing rapid advances in RTD technology.