Twisted Integration of Complex Oxide Magnetoelectric Heterostructures via Water‑Etching and Transfer Process
作者机构:State Key Laboratory for Manufacturing Systems EngineeringElectronic Materials Research LaboratoryKey Laboratory of the Ministry of EducationEngineering Research Center of Spin Quantum Sensor ChipsUniversities of Shaanxi ProvinceSchool of Electronic Science and EngineeringXi’an Jiaotong UniversityXi’an 710049People’s Republic of China
出 版 物:《Nano-Micro Letters》 (纳微快报(英文版))
年 卷 期:2024年第16卷第1期
页 面:360-369页
核心收录:
学科分类:07[理学] 0809[工学-电子科学与技术(可授工学、理学学位)] 070205[理学-凝聚态物理] 08[工学] 0805[工学-材料科学与工程(可授工学、理学学位)] 080502[工学-材料学] 0703[理学-化学] 0701[理学-数学] 0702[理学-物理学]
基 金:supported by the National Key Research and Development Program of China (Grant No. 2021YFB3201800) Natural Science Foundation of China (Grant Nos. U22A2019, 91964109, 52372123) State Key Laboratory for Mechanical Behavior of Materials (No. 20222405) Innovation Capability Support Program of Shaanxi (Grant No. 2021TD-12) National 111 Project of China (B14040) support from the Instrumental Analysis Center of Xi’an Jiaotong University
主 题:Magnetoelectric heterostructures Twist angle Epitaxial lift-off Magnetic anisotropy Ferromagnetic resonance
摘 要:Manipulating strain mode and degree that can be applied to epitaxial complex oxide thin films have been a cornerstone of strain *** recent years,lift-off and transfer technology of the epitaxial oxide thin films have been developed that enabled the integration of heterostructures without the limitation of material types and crystal ***,twisted integration would provide a more interesting strategy in artificial magnetoelectric heterostructures.A specific twist angle between the ferroelectric and ferromagnetic oxide layers corresponds to the distinct strain regulation modes in the magnetoelectric coupling process,which could provide some insight in to the physical *** this work,the La_(0.67)Sr_(0.33)MnO_(3)(001)/0.7Pb(Mg_(1/3)Nb_(2/3))O_(3)-0.3PbTiO_(3)(011)(LSMO/PMN-PT)heterostructures with *** *** angles were assembled via water-etching and transfer *** transferred LSMO films exhibit a fourfold magnetic anisotropy with easy axis along LSMO.A coexistence of uniaxial and fourfold magnetic anisotropy with LSMO[110]easy axis is observed for the 45°Sample by applying a 7.2 kV cm^(−1)electrical field,significantly different from a uniaxial anisotropy with LSMO[100]easy axis for the 0°*** fitting of the ferromagnetic resonance field reveals that the strain coupling generated by the 45°twist angle causes different lattice distortion of LSMO,thereby enhancing both the fourfold and uniaxial *** work confirms the twisting degrees of freedom for magnetoelectric coupling and opens opportunities for fabricating artificial magnetoelectric heterostructures.